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场驱动磁性随机存储器

This first generation MRAM provides important characteristicssuch as relatively fast operation, nonvolatility, radiation hardness, and high density,however, its widespread future use is restricted by serious limitations. One of the most crucial is scalability. As the size of the MRAM element shrinks, the field required for switching increases, which means more current has to be passed through the metal lines. This in turn greatly increases power consumption. (ACM Journal on Emerging Technologies in Computing Systems, Vol. 9, No. 2, Article 13, Pub. date: May 2013.)

First generation MRAM cells were built using MTJs magnetized in the plane of the constituting layers and written using localized magnetic fields created by an array of metallic lines. This raised multiple technical challenges, most of which could be overcome by material engineering and cell design improvements.However, even though chips are actually commercialized, the market for these chips has remained fairly small due to the high power consumption and limited scaling potential inherent to the use of magnetic fields.(JOURNAL OF APPLIED PHYSICS 115, 172615 (2014).)

第一代MRAM的数据写入方式主要是向导线中通电使其周围产生磁场,从而改变邻近的存储单元的磁化程度。虽然这种方法的写入速度较快,但是其耗电量过大。